Nanoelectronics

As silicon transistors are getting smaller and smaller, eventually quantum mechanical effects will dominate.

• Doping
  Doped semiconductors - Charge carrier concentration as a function of temperature in Si, Ge, GaAs
• 1D MOSFET
  p-Si / SiO₂ / poly-Si structure (MOSFET with inversion channel due to applied gate voltage)
  
• Strained silicon (bulk)
  k.p dispersion in bulk, biaxially strained and uniaxially strained Si
• Si inversion channels
  k_|| dispersion of holes in unstrained and strained silicon inversion layers
  
• Bulk Si devices
  n-i-n Si resistor (1D)
  I-V curve of an n-doped Si structure (2D)
  
• Ultrathin-body Double Gate FET - DG MOSFET (Double Gate Metal Oxide Semiconductor Field Effect Transistor)
  DGMOS Structure 1 - Double Gate MOSFET (2D)
  (Metal Oxide Semiconductor Field Effect Transistor)
  DGMOS Structure 2 - Double Gate MOSFET (2D)
  (including quantum mechanics)

Capacitance-Voltage curve of a “metal”-insulator-semiconductor (MIS) structure

What you can learn:

• apply a bias
• self-consistent Schrödinger-Poisson equation

Double Gate MOSFET (Metal Oxide Semiconductor Field Effect Transistor)

What you can learn:

• 2D and 3D simulations, drift-diffusion, mobility models
• self-consistent Current-Poisson equation in 2D and 3D

RTD
Resonant Tunneling Diode - nextnano.MSB software
(Resonant Tunneling Diode - nextnano³ software)
I-V characteristics calculated with a nonequilibrium Green's function approach (NEGF)